IRFH5007PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFH5007PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 65 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 510 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
Package: PQFN5X6
IRFH5007PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFH5007PBF Datasheet (PDF)
irfh5007pbf.pdf
PD -95958IRFH5007PbFHEXFET Power MOSFETVDS75 VRDS(on) max 5.9 m(@VGS = 10V)Qg (typical)65nCRG (typical)1.2ID 100 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 5.9m)
irfh5007pbf.pdf
IRFH5007PbFHEXFET Power MOSFETVDS 75 VRDS(on) max 5.9 m(@VGS = 10V)Qg (typical) 65 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 5.9m) Lower Conduction Losses
irfh5006trpbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
irfh5004pbf.pdf
IRFH5004PbFHEXFET Power MOSFETVDS 40 VRDS(on) max 2.6 m(@VGS = 10V)Qg (typical) 73 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C) PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 2.6m) Lower Conduction LossesL
irfh5006pbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
irfh5004pbf.pdf
IRFH5004PbFHEXFET Power MOSFETVDS 40 VRDS(on) max 2.6 m(@VGS = 10V)Qg (typical) 73 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C) PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 2.6m) Lower Conduction LossesL
irfh5006pbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
