IRLZ44NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLZ44NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 48(max) nC
   trⓘ - Tiempo de subida: 84 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO262

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IRLZ44NL Datasheet (PDF)

..1. Size:178K international rectifier
irlz44ns irlz44nl.pdf

PD - 91347DIRLZ44NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ44NS) Low-profile through-hole (IRLZ44NL) 175C Operating TemperatureRDS(on) = 0.022 Fast SwitchingG Fully Avalanche RatedID = 47ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

..2. Size:340K international rectifier
irlz44nlpbf irlz44nspbf.pdf

IRLZ44NS/LPbFl Logic-Level Gate Drive l Advanced Process TechnologyDl Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL)l 175C Operating Temperature DS(on) l Fast SwitchingGl Fully Avalanche Rated D l Lead-FreeSDescription

..3. Size:340K infineon
irlz44ns irlz44nl.pdf

7.1. Size:102K international rectifier
irlz44n.pdf

PD - 9.1346BIRLZ44NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.022 Fast SwitchingG Fully Avalanche RatedID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan

7.2. Size:223K international rectifier
irlz44npbf.pdf

PD - 94831IRLZ44NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.022l Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

7.3. Size:223K infineon
irlz44npbf.pdf

7.4. Size:245K inchange semiconductor
irlz44n.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ44N IIRLZ44NFEATURESStatic drain-source on-resistance:RDS(on) 22mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

Otros transistores... IRLZ34A , IRLZ34N , IRLZ34NL , IRLZ34NS , IRLZ40 , IRLZ44 , IRLZ44A , IRLZ44N , 12N60 , IRLZ44NS , ITF86110DK8T , ITF86116SQT , ITF86130SK8T , ITF86172SK8T , ITF86174SQT , ITF86182SK8T , ITF87008DQT .

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