IRLZ44NL MOSFET Datasheet: N-Ch, 55V, 47A. Full specification with pinout and replacement list

IRLZ44NL Specs and Replacement

Type Designator: IRLZ44NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 84 nS

Cossⓘ - Output Capacitance: 400 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO262

IRLZ44NL substitution

- MOSFET ⓘ Cross-Reference Search

IRLZ44NL datasheet

..1. Size:340K international rectifier
irlz44ns irlz44nl.pdf pdf_icon

IRLZ44NS/LPbF l Logic-Level Gate Drive l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature DS(on) l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description ... See More ⇒

..2. Size:340K international rectifier
irlz44nlpbf irlz44nspbf.pdf pdf_icon

7.1. Size:102K international rectifier
irlz44n.pdf pdf_icon

PD - 9.1346B IRLZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.022 Fast Switching G Fully Avalanche Rated ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistan... See More ⇒

7.2. Size:223K international rectifier
irlz44npbf.pdf pdf_icon

PD - 94831 IRLZ44NPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.022 l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest ... See More ⇒