AM30N15-60D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM30N15-60D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 167 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.069 Ohm

Encapsulados: TO-252

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AM30N15-60D datasheet

 ..1. Size:306K  analog power
 am30n15-60d.pdf pdf_icon

AM30N15-60D

Analog Power AM30N15-60D N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 69 @ VGS = 10V 22 Low thermal impedance 150 110 @ VGS = 5.5V 18 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 8.1. Size:296K  analog power
 am30n10-70d.pdf pdf_icon

AM30N15-60D

Analog Power AM30N10-70D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 78 @ VGS = 10V 26 Low thermal impedance 100 92 @ VGS = 4.5V 25 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co

 8.2. Size:143K  analog power
 am30n10-70de.pdf pdf_icon

AM30N15-60D

Analog Power AM30N10-70DE N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m ) ID (A) ( rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21 converters and power management in portable and 100 92 @ VGS = 4.5V 20

 8.3. Size:86K  analog power
 am30n10-78d.pdf pdf_icon

AM30N15-60D

Analog Power AM30N10-78D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21 converters and power management in portable and 100 98 @ VGS = 4.5V 19 bat

MOSTRAR MÁS

Otros transistores... AM30N06-39D, AM30N06-39IE, AM30N06-65DA, AM30N08-80D, AM30N10-50D, AM30N10-70D, AM30N10-70DE, AM30N10-78D, AO3407, AM30N20-400PCFM, AM30N20-78D, AM30N25-270P, AM30P06-40D, AM30P06-45D, AM30P10-80D, AM3400, AM3400A