AM30N15-60D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AM30N15-60D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 22 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 24 nC
Время нарастания (tr): 22 ns
Выходная емкость (Cd): 167 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.069 Ohm
Тип корпуса: TO-252
Аналог (замена) для AM30N15-60D
AM30N15-60D Datasheet (PDF)
am30n15-60d.pdf
Analog Power AM30N15-60DN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)69 @ VGS = 10V22 Low thermal impedance 150110 @ VGS = 5.5V18 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
am30n10-70d.pdf
Analog Power AM30N10-70DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)78 @ VGS = 10V26 Low thermal impedance 10092 @ VGS = 4.5V25 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co
am30n10-70de.pdf
Analog Power AM30N10-70DEN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10092 @ VGS = 4.5V 20
am30n10-78d.pdf
Analog Power AM30N10-78DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10098 @ VGS = 4.5V 19bat
am30n10-50d.pdf
Analog Power AM30N10-50DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 50 @ VGS = 10V 26converters and power management in portable and 10059 @ VGS = 4.5V 24bat
am30n10.pdf
isc N-Channel MOSFET Transistor AM30N10FEATURESDrain Current :I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLED backlightingPower supplySwitching applicationsA
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
