Справочник MOSFET. AM30N15-60D

 

AM30N15-60D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM30N15-60D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 167 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.069 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AM30N15-60D

 

 

AM30N15-60D Datasheet (PDF)

 ..1. Size:306K  analog power
 am30n15-60d.pdf

AM30N15-60D AM30N15-60D

Analog Power AM30N15-60DN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)69 @ VGS = 10V22 Low thermal impedance 150110 @ VGS = 5.5V18 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 8.1. Size:296K  analog power
 am30n10-70d.pdf

AM30N15-60D AM30N15-60D

Analog Power AM30N10-70DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)78 @ VGS = 10V26 Low thermal impedance 10092 @ VGS = 4.5V25 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co

 8.2. Size:143K  analog power
 am30n10-70de.pdf

AM30N15-60D AM30N15-60D

Analog Power AM30N10-70DEN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10092 @ VGS = 4.5V 20

 8.3. Size:86K  analog power
 am30n10-78d.pdf

AM30N15-60D AM30N15-60D

Analog Power AM30N10-78DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10098 @ VGS = 4.5V 19bat

 8.4. Size:65K  analog power
 am30n10-50d.pdf

AM30N15-60D AM30N15-60D

Analog Power AM30N10-50DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 50 @ VGS = 10V 26converters and power management in portable and 10059 @ VGS = 4.5V 24bat

 8.5. Size:262K  inchange semiconductor
 am30n10.pdf

AM30N15-60D AM30N15-60D

isc N-Channel MOSFET Transistor AM30N10FEATURESDrain Current :I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLED backlightingPower supplySwitching applicationsA

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