All MOSFET. AM30N15-60D Datasheet

 

AM30N15-60D Datasheet and Replacement


   Type Designator: AM30N15-60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 24 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 167 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: TO-252
 

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AM30N15-60D Datasheet (PDF)

 ..1. Size:306K  analog power
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AM30N15-60D

Analog Power AM30N15-60DN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)69 @ VGS = 10V22 Low thermal impedance 150110 @ VGS = 5.5V18 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 8.1. Size:296K  analog power
am30n10-70d.pdf pdf_icon

AM30N15-60D

Analog Power AM30N10-70DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)78 @ VGS = 10V26 Low thermal impedance 10092 @ VGS = 4.5V25 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co

 8.2. Size:143K  analog power
am30n10-70de.pdf pdf_icon

AM30N15-60D

Analog Power AM30N10-70DEN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10092 @ VGS = 4.5V 20

 8.3. Size:86K  analog power
am30n10-78d.pdf pdf_icon

AM30N15-60D

Analog Power AM30N10-78DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10098 @ VGS = 4.5V 19bat

Datasheet: AM30N06-39D , AM30N06-39IE , AM30N06-65DA , AM30N08-80D , AM30N10-50D , AM30N10-70D , AM30N10-70DE , AM30N10-78D , 7N60 , AM30N20-400PCFM , AM30N20-78D , AM30N25-270P , AM30P06-40D , AM30P06-45D , AM30P10-80D , AM3400 , AM3400A .

History: 2SK3667

Keywords - AM30N15-60D MOSFET datasheet

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