AM30N15-60D MOSFET. Datasheet pdf. Equivalent
Type Designator: AM30N15-60D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 167 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
Package: TO-252
AM30N15-60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM30N15-60D Datasheet (PDF)
am30n15-60d.pdf
Analog Power AM30N15-60DN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)69 @ VGS = 10V22 Low thermal impedance 150110 @ VGS = 5.5V18 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
am30n10-70d.pdf
Analog Power AM30N10-70DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)78 @ VGS = 10V26 Low thermal impedance 10092 @ VGS = 4.5V25 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co
am30n10-70de.pdf
Analog Power AM30N10-70DEN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10092 @ VGS = 4.5V 20
am30n10-78d.pdf
Analog Power AM30N10-78DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10098 @ VGS = 4.5V 19bat
am30n10-50d.pdf
Analog Power AM30N10-50DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 50 @ VGS = 10V 26converters and power management in portable and 10059 @ VGS = 4.5V 24bat
am30n10.pdf
isc N-Channel MOSFET Transistor AM30N10FEATURESDrain Current :I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLED backlightingPower supplySwitching applicationsA
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