AM3933P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM3933P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 26.5 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: TSOP-6
Búsqueda de reemplazo de AM3933P MOSFET
AM3933P Datasheet (PDF)
am3933p.pdf

Analog Power AM3933PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A)this device ideal for use in power management circuitry. Typical applications are DC-DC 0.130 @ VGS = -4.5V -2.5-26.5converters, power management in
am3932n.pdf

Analog Power AM3932NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5converters and power management in portable and 30battery-powered products s
am3932ne.pdf

Analog Power AM3932NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5converters and power management in portable and 30battery-powered products su
am3930n.pdf

Analog Power AM3930NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in p
Otros transistores... AM3904N , AM3906N , AM3921P , AM3922N , AM3925P , AM3930N , AM3932N , AM3932NE , RFP50N06 , AM3940N , AM3940NE , AM3949P , AM3961P , AM3962N , AM3962NE , AM3993P , AM3998N .
History: IRF7755GPBF | NCE60P04SN | DH300N08F | BSC057N03MSG | STF42N65M5 | APT6013LFLLG | IXTH05N250P3HV
History: IRF7755GPBF | NCE60P04SN | DH300N08F | BSC057N03MSG | STF42N65M5 | APT6013LFLLG | IXTH05N250P3HV



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