AM3933P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM3933P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 26.5 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 130 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Encapsulados: TSOP-6
Búsqueda de reemplazo de AM3933P MOSFET
- Selecciónⓘ de transistores por parámetros
AM3933P datasheet
am3933p.pdf
Analog Power AM3933P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A) this device ideal for use in power management circuitry. Typical applications are DC-DC 0.130 @ VGS = -4.5V -2.5 -26.5 converters, power management in
am3932n.pdf
Analog Power AM3932N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products s
am3932ne.pdf
Analog Power AM3932NE N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products su
am3930n.pdf
Analog Power AM3930N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5 circuitry. Typical applications are PWMDC-DC 30 converters, power management in p
Otros transistores... AM3904N, AM3906N, AM3921P, AM3922N, AM3925P, AM3930N, AM3932N, AM3932NE, AON7410, AM3940N, AM3940NE, AM3949P, AM3961P, AM3962N, AM3962NE, AM3993P, AM3998N
History: AM3443C | WMN22N50C4 | WMO08N80M3 | AM4438N | RSD080N06 | AM3925P | RSD160P05
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