All MOSFET. AM3933P Datasheet

 

AM3933P Datasheet and Replacement


   Type Designator: AM3933P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 26.5 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TSOP-6
 

 AM3933P substitution

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AM3933P Datasheet (PDF)

 ..1. Size:115K  analog power
am3933p.pdf pdf_icon

AM3933P

Analog Power AM3933PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A)this device ideal for use in power management circuitry. Typical applications are DC-DC 0.130 @ VGS = -4.5V -2.5-26.5converters, power management in

 9.1. Size:235K  analog power
am3932n.pdf pdf_icon

AM3933P

Analog Power AM3932NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5converters and power management in portable and 30battery-powered products s

 9.2. Size:262K  analog power
am3932ne.pdf pdf_icon

AM3933P

Analog Power AM3932NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5converters and power management in portable and 30battery-powered products su

 9.3. Size:151K  analog power
am3930n.pdf pdf_icon

AM3933P

Analog Power AM3930NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in p

Datasheet: AM3904N , AM3906N , AM3921P , AM3922N , AM3925P , AM3930N , AM3932N , AM3932NE , RFP50N06 , AM3940N , AM3940NE , AM3949P , AM3961P , AM3962N , AM3962NE , AM3993P , AM3998N .

History: AP85T10GR-HF | CEP20P06 | MSF7N65 | SSM3K339R | SP8M8FRA | BRCS3404MA | SI2304

Keywords - AM3933P MOSFET datasheet

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