AM3933P
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AM3933P
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.15
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 26.5
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 2.5
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 6
nC
trⓘ -
Время нарастания: 20
ns
Cossⓘ - Выходная емкость: 130
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13
Ohm
Тип корпуса:
TSOP-6
Аналог (замена) для AM3933P
AM3933P
Datasheet (PDF)
..1. Size:115K analog power
am3933p.pdf 
Analog Power AM3933PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A)this device ideal for use in power management circuitry. Typical applications are DC-DC 0.130 @ VGS = -4.5V -2.5-26.5converters, power management in
9.1. Size:235K analog power
am3932n.pdf 
Analog Power AM3932NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5converters and power management in portable and 30battery-powered products s
9.2. Size:262K analog power
am3932ne.pdf 
Analog Power AM3932NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5converters and power management in portable and 30battery-powered products su
9.3. Size:151K analog power
am3930n.pdf 
Analog Power AM3930NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in p
Другие MOSFET... IRFP360LC
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