AM4396N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM4396N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 167 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AM4396N

AM4396N Datasheet (PDF)

..1. Size:322K analog power
am4396n.pdf

Analog Power AM4396NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)110 @ VGS = 10V4.4 Low thermal impedance 150115 @ VGS = 5.5V4.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

9.1. Size:320K analog power
am4394n.pdf

Analog Power AM4394NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)50 @ VGS = 10V6.5 Low thermal impedance 15060 @ VGS = 5.5V5.9 Fast switching speed SO-8 Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

9.2. Size:192K analog power
am4390n.pdf

Analog Power AM4390NN-Channel 150V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.625 @ VGS = 10 V 1.9battery-powered products suc

9.3. Size:313K analog power
am4392n.pdf

Analog Power AM4392NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)255 @ VGS = 10V2.9 Low thermal impedance 150290 @ VGS = 5.5V2.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

9.4. Size:848K cn vbsemi
am4392n-t1.pdf

AM4392N-T1www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.260 at VGS = 10 V3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSD Primary Side SwitchSO-8SD1 8SD2 7GSD3 6GD4 5STop ViewN-Chann

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