All MOSFET. AM4396N Datasheet

 

AM4396N MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM4396N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 167 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SO-8

 AM4396N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM4396N Datasheet (PDF)

 ..1. Size:322K  analog power
 am4396n.pdf

AM4396N AM4396N

Analog Power AM4396NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)110 @ VGS = 10V4.4 Low thermal impedance 150115 @ VGS = 5.5V4.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 9.1. Size:320K  analog power
 am4394n.pdf

AM4396N AM4396N

Analog Power AM4394NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)50 @ VGS = 10V6.5 Low thermal impedance 15060 @ VGS = 5.5V5.9 Fast switching speed SO-8 Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.2. Size:192K  analog power
 am4390n.pdf

AM4396N AM4396N

Analog Power AM4390NN-Channel 150V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.625 @ VGS = 10 V 1.9battery-powered products suc

 9.3. Size:313K  analog power
 am4392n.pdf

AM4396N AM4396N

Analog Power AM4392NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)255 @ VGS = 10V2.9 Low thermal impedance 150290 @ VGS = 5.5V2.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 9.4. Size:848K  cn vbsemi
 am4392n-t1.pdf

AM4396N AM4396N

AM4392N-T1www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.260 at VGS = 10 V3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSD Primary Side SwitchSO-8SD1 8SD2 7GSD3 6GD4 5STop ViewN-Chann

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