ITF87072DK8T Todos los transistores

 

ITF87072DK8T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ITF87072DK8T

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 72 nS

Cossⓘ - Capacitancia de salida: 325 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm

Encapsulados: SO8

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ITF87072DK8T datasheet

 ..1. Size:173K  intersil
 itf87072dk8t.pdf pdf_icon

ITF87072DK8T

ITF87072DK8T TM Data Sheet March 2000 File Number 4812.3 6A, 20V, 0.037 Ohm, Dual P-Channel, Features 2.5V Specified Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = -4.5V Packaging - rDS(ON) = 0.039 , VGS = -4.0V SO8 (JEDEC MS-012AA) - rDS(ON) = 0.059 , VGS = -2.5V Gate to Source Protection Diode BRANDING DASH Simulation Models - Temperature Compen

 8.1. Size:201K  intersil
 itf87008dqt.pdf pdf_icon

ITF87072DK8T

ITF87008DQT Data Sheet March 2000 File Number 4814.2 7.0A, 20V, 0.023 Ohm, Dual N-Channel, Features 2.5V Specified Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.023 , VGS = 4.5V Packaging - rDS(ON) = 0.024 , VGS = 4.0V TSSOP-8 - rDS(ON) = 0.029 , VGS = 2.5V 2.5 Volt Gate Drive Capability 5 Gate to Source Protection Diode 1 Simulation Models 2 4 3 - T

 8.2. Size:236K  intersil
 itf87056dqt.pdf pdf_icon

ITF87072DK8T

ITF87056DQT Data Sheet March 2000 File Number 4813.2 5A, 20V, 0.045 Ohm, Dual P-Channel, Features 2.5V Specified Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.045 , VGS = -4.5V Packaging - rDS(ON) = 0.048 , VGS = -4.0V TSSOP-8 - rDS(ON) = 0.077 , VGS = -2.5V 2.5V Gate Drive Capability 5 Gate to Source Protection Diode 1 Simulation Models 2 4 3 - Temp

 8.3. Size:186K  intersil
 itf87052svt.pdf pdf_icon

ITF87072DK8T

ITF87052SVT Data Sheet March 2000 File Number 4800.3 3A, 20V, 0.115 Ohm, P-Channel, Features 2.5V Specified Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.115 , VGS = -4.5V Packaging - rDS(ON) = 0.120 , VGS = -4.0V TSOP-6 - rDS(ON) = 0.190 , VGS = -2.5V 2.5 V Gate Drive Capability Small Profile Package 4 1 Gate to Source Protection Diode 2 3 Simula

MOSTRAR MÁS

Otros transistores... ITF86172SK8T , ITF86174SQT , ITF86182SK8T , ITF87008DQT , ITF87012SVT , ITF87052SVT , ITF87056DQT , ITF87068SQT , IRFB3607 , 12N65KL-TF , 20N03 , 2N0609 , 2SK2080 , 2SK2652 , 2SK2654 , 2SK3530 , 2SK3681 .

 

 

 

 

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