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ITF87072DK8T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ITF87072DK8T
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 72 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
   Paquete / Cubierta: SO8
 

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ITF87072DK8T Datasheet (PDF)

 ..1. Size:173K  intersil
 itf87072dk8t.pdf pdf_icon

ITF87072DK8T

ITF87072DK8TTMData Sheet March 2000 File Number 4812.36A, 20V, 0.037 Ohm, Dual P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = -4.5VPackaging- rDS(ON) = 0.039, VGS = -4.0VSO8 (JEDEC MS-012AA)- rDS(ON) = 0.059, VGS = -2.5V Gate to Source Protection DiodeBRANDING DASH Simulation Models- Temperature Compen

 8.1. Size:201K  intersil
 itf87008dqt.pdf pdf_icon

ITF87072DK8T

ITF87008DQTData Sheet March 2000 File Number 4814.27.0A, 20V, 0.023 Ohm, Dual N-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.023, VGS = 4.5VPackaging- rDS(ON) = 0.024, VGS = 4.0VTSSOP-8- rDS(ON) = 0.029, VGS = 2.5V 2.5 Volt Gate Drive Capability5 Gate to Source Protection Diode1 Simulation Models243- T

 8.2. Size:236K  intersil
 itf87056dqt.pdf pdf_icon

ITF87072DK8T

ITF87056DQTData Sheet March 2000 File Number 4813.25A, 20V, 0.045 Ohm, Dual P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.045, VGS = -4.5VPackaging- rDS(ON) = 0.048, VGS = -4.0VTSSOP-8- rDS(ON) = 0.077, VGS = -2.5V 2.5V Gate Drive Capability5 Gate to Source Protection Diode1 Simulation Models243- Temp

 8.3. Size:186K  intersil
 itf87052svt.pdf pdf_icon

ITF87072DK8T

ITF87052SVTData Sheet March 2000 File Number 4800.33A, 20V, 0.115 Ohm, P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.115, VGS = -4.5VPackaging- rDS(ON) = 0.120, VGS = -4.0VTSOP-6- rDS(ON) = 0.190, VGS = -2.5V 2.5 V Gate Drive Capability Small Profile Package41 Gate to Source Protection Diode23 Simula

MOSTRAR MÁS

Otros transistores... ITF86172SK8T , ITF86174SQT , ITF86182SK8T , ITF87008DQT , ITF87012SVT , ITF87052SVT , ITF87056DQT , ITF87068SQT , AON7506 , 12N65KL-TF , 20N03 , 2N0609 , 2SK2080 , 2SK2652 , 2SK2654 , 2SK3530 , 2SK3681 .

History: IRFIZ34A | ITF86172SK8T | BSS123A | FDI040N06 | IXFN26N90 | IRFIZ44A | IXTH180N10T

 

 
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