All MOSFET. ITF87072DK8T Datasheet

 

ITF87072DK8T Datasheet and Replacement


   Type Designator: ITF87072DK8T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: SO8
 

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ITF87072DK8T Datasheet (PDF)

 ..1. Size:173K  intersil
 itf87072dk8t.pdf pdf_icon

ITF87072DK8T

ITF87072DK8TTMData Sheet March 2000 File Number 4812.36A, 20V, 0.037 Ohm, Dual P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = -4.5VPackaging- rDS(ON) = 0.039, VGS = -4.0VSO8 (JEDEC MS-012AA)- rDS(ON) = 0.059, VGS = -2.5V Gate to Source Protection DiodeBRANDING DASH Simulation Models- Temperature Compen

 8.1. Size:201K  intersil
 itf87008dqt.pdf pdf_icon

ITF87072DK8T

ITF87008DQTData Sheet March 2000 File Number 4814.27.0A, 20V, 0.023 Ohm, Dual N-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.023, VGS = 4.5VPackaging- rDS(ON) = 0.024, VGS = 4.0VTSSOP-8- rDS(ON) = 0.029, VGS = 2.5V 2.5 Volt Gate Drive Capability5 Gate to Source Protection Diode1 Simulation Models243- T

 8.2. Size:236K  intersil
 itf87056dqt.pdf pdf_icon

ITF87072DK8T

ITF87056DQTData Sheet March 2000 File Number 4813.25A, 20V, 0.045 Ohm, Dual P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.045, VGS = -4.5VPackaging- rDS(ON) = 0.048, VGS = -4.0VTSSOP-8- rDS(ON) = 0.077, VGS = -2.5V 2.5V Gate Drive Capability5 Gate to Source Protection Diode1 Simulation Models243- Temp

 8.3. Size:186K  intersil
 itf87052svt.pdf pdf_icon

ITF87072DK8T

ITF87052SVTData Sheet March 2000 File Number 4800.33A, 20V, 0.115 Ohm, P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.115, VGS = -4.5VPackaging- rDS(ON) = 0.120, VGS = -4.0VTSOP-6- rDS(ON) = 0.190, VGS = -2.5V 2.5 V Gate Drive Capability Small Profile Package41 Gate to Source Protection Diode23 Simula

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