AM4530CE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM4530CE

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SOIC-8

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AM4530CE datasheet

 ..1. Size:205K  analog power
 am4530ce.pdf pdf_icon

AM4530CE

Analog Power AM4530CE P & N-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2 GS 30 converters and power management in portable and 50 @ V = 10V 5.3 G

 7.1. Size:225K  analog power
 am4530c.pdf pdf_icon

AM4530CE

Analog Power AM4530C P & N-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2 GS 30 converters and power management in portable and 50 @ V = 10V 5.3 GS

 9.1. Size:83K  analog power
 am4536c.pdf pdf_icon

AM4530CE

Analog Power AM4536C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 42 @ V = 4.5V 5.8 GS 30 converters and power management in portable and 28 @ V = 10V 7.1 G

 9.2. Size:163K  analog power
 am4534c.pdf pdf_icon

AM4530CE

Analog Power AM4534C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 4.5V 6.0 30 circuitry. Typical applications are PWMDC-DC 28 @ V = 10V 7.0 GS conver

MOSTRAR MÁS

Otros transistores... AM4502C, AM4502CE, AM4512AC, AM4512C, AM4512CE, AM4520H, AM4528C, AM4530C, 8205A, AM4531C, AM4533C, AM4534C, AM4536C, AM4540C, AM4541C, AM4542C, AM4543C