AM4530CE. Аналоги и основные параметры

Наименование производителя: AM4530CE

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm

Тип корпуса: SOIC-8

Аналог (замена) для AM4530CE

- подборⓘ MOSFET транзистора по параметрам

 

AM4530CE даташит

 ..1. Size:205K  analog power
 am4530ce.pdf pdf_icon

AM4530CE

Analog Power AM4530CE P & N-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2 GS 30 converters and power management in portable and 50 @ V = 10V 5.3 G

 7.1. Size:225K  analog power
 am4530c.pdf pdf_icon

AM4530CE

Analog Power AM4530C P & N-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2 GS 30 converters and power management in portable and 50 @ V = 10V 5.3 GS

 9.1. Size:83K  analog power
 am4536c.pdf pdf_icon

AM4530CE

Analog Power AM4536C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 42 @ V = 4.5V 5.8 GS 30 converters and power management in portable and 28 @ V = 10V 7.1 G

 9.2. Size:163K  analog power
 am4534c.pdf pdf_icon

AM4530CE

Analog Power AM4534C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 4.5V 6.0 30 circuitry. Typical applications are PWMDC-DC 28 @ V = 10V 7.0 GS conver

ПОКАЗАТЬ ЕЩЁ

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