Справочник MOSFET. AM4530CE

 

AM4530CE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM4530CE
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
   Тип корпуса: SOIC-8
     - подбор MOSFET транзистора по параметрам

 

AM4530CE Datasheet (PDF)

 ..1. Size:205K  analog power
am4530ce.pdfpdf_icon

AM4530CE

Analog Power AM4530CEP & N-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2GS30converters and power management in portable and 50 @ V = 10V 5.3G

 7.1. Size:225K  analog power
am4530c.pdfpdf_icon

AM4530CE

Analog Power AM4530CP & N-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2GS30converters and power management in portable and 50 @ V = 10V 5.3GS

 9.1. Size:83K  analog power
am4536c.pdfpdf_icon

AM4530CE

Analog Power AM4536CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 42 @ V = 4.5V 5.8GS30converters and power management in portable and 28 @ V = 10V 7.1G

 9.2. Size:163K  analog power
am4534c.pdfpdf_icon

AM4530CE

Analog Power AM4534CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 4.5V 6.030circuitry. Typical applications are PWMDC-DC 28 @ V = 10V 7.0GSconver

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