AM4530CE MOSFET. Datasheet pdf. Equivalent
Type Designator: AM4530CE
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.2 nC
trⓘ - Rise Time: 5 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOIC-8
AM4530CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM4530CE Datasheet (PDF)
am4530ce.pdf
Analog Power AM4530CEP & N-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2GS30converters and power management in portable and 50 @ V = 10V 5.3G
am4530c.pdf
Analog Power AM4530CP & N-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2GS30converters and power management in portable and 50 @ V = 10V 5.3GS
am4536c.pdf
Analog Power AM4536CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 42 @ V = 4.5V 5.8GS30converters and power management in portable and 28 @ V = 10V 7.1G
am4534c.pdf
Analog Power AM4534CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 4.5V 6.030circuitry. Typical applications are PWMDC-DC 28 @ V = 10V 7.0GSconver
am4533c.pdf
Analog Power AM4533CPRODUCT SUMMARYN & P-Channel 30-V (D-S) MOSFET rDS(on) (m)VDS (V) ID(A)31 @ VGS = 4.5V6.83040 @ VGS = 2.5V6.1Key Features: 52 @ VGS = -4.5V -5.2 Low r trench technology DS(on)-3080 @ VGS = -2.5V -4.2 Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems
am4531c.pdf
Analog Power AM4531CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 2.5V 4.2GS30converters and power management in portable and 58 @ V = 4.5V 5.0G
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NDH831N
History: NDH831N
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