AM4917P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM4917P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 66 nS

Cossⓘ - Capacitancia de salida: 435 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0175 Ohm

Encapsulados: SO-8

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AM4917P datasheet

 ..1. Size:326K  analog power
 am4917p.pdf pdf_icon

AM4917P

Analog Power AM4917P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 17.5 @ VGS = -4.5V -9.0 Low thermal impedance -20 23 @ VGS = -2.5V -7.9 Fast switching speed 48 @ VGS = -1.8V -5.5 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion C

 9.1. Size:312K  analog power
 am4915p.pdf pdf_icon

AM4917P

Analog Power AM4915P Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 17.5 @ VGS = -10V -9.0 Low thermal impedance -30 23 @ VGS = -4.5V -7.9 Fast switching speed SO-8 Typical Applications Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UN

 9.2. Size:191K  analog power
 am4910n.pdf pdf_icon

AM4917P

Analog Power AM4910N Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 13.5 @ VGS = 10V 10 converters and power management in portable and 30 battery-powered produ

 9.3. Size:203K  analog power
 am4919p.pdf pdf_icon

AM4917P

Analog Power AM4919P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 21 @ VGS = -4.5V 8.2 circuitry. Typical applications are PWMDC-DC -20 35 @ VGS = -2.5V 6.4 converters,

MOSTRAR MÁS

Otros transistores... AM4842N, AM4844NE, AM4874N, AM4890N, AM4892N, AM4902N, AM4910N, AM4915P, IRFP450, AM4919P, AM4920, AM4920N, AM4922N, AM4924N, AM4926N, AM4929P, AM4930N