AM4917P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM4917P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 435 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0175 Ohm
   Paquete / Cubierta: SO-8

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AM4917P Datasheet (PDF)

..1. Size:326K analog power
am4917p.pdf

Analog Power AM4917PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)17.5 @ VGS = -4.5V -9.0 Low thermal impedance -20 23 @ VGS = -2.5V -7.9 Fast switching speed 48 @ VGS = -1.8V -5.5Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion C

9.1. Size:312K analog power
am4915p.pdf

Analog Power AM4915PDual P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)17.5 @ VGS = -10V -9.0 Low thermal impedance -3023 @ VGS = -4.5V -7.9 Fast switching speed SO-8 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UN

9.2. Size:191K analog power
am4910n.pdf

Analog Power AM4910NDual N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 13.5 @ VGS = 10V 10converters and power management in portable and 30battery-powered produ

9.3. Size:203K analog power
am4919p.pdf

Analog Power AM4919PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 21 @ VGS = -4.5V 8.2circuitry. Typical applications are PWMDC-DC -2035 @ VGS = -2.5V 6.4converters,

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FTA02N60C

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