All MOSFET. AM4917P Datasheet

 

AM4917P MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM4917P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 435 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: SO-8

 AM4917P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM4917P Datasheet (PDF)

 ..1. Size:326K  analog power
 am4917p.pdf

AM4917P AM4917P

Analog Power AM4917PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)17.5 @ VGS = -4.5V -9.0 Low thermal impedance -20 23 @ VGS = -2.5V -7.9 Fast switching speed 48 @ VGS = -1.8V -5.5Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion C

 9.1. Size:312K  analog power
 am4915p.pdf

AM4917P AM4917P

Analog Power AM4915PDual P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)17.5 @ VGS = -10V -9.0 Low thermal impedance -3023 @ VGS = -4.5V -7.9 Fast switching speed SO-8 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UN

 9.2. Size:191K  analog power
 am4910n.pdf

AM4917P AM4917P

Analog Power AM4910NDual N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 13.5 @ VGS = 10V 10converters and power management in portable and 30battery-powered produ

 9.3. Size:203K  analog power
 am4919p.pdf

AM4917P AM4917P

Analog Power AM4919PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 21 @ VGS = -4.5V 8.2circuitry. Typical applications are PWMDC-DC -2035 @ VGS = -2.5V 6.4converters,

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPP65R280C6 | CS2N70A3R1-G

 

 
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