AM4917P Specs and Replacement

Type Designator: AM4917P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 435 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm

Package: SO-8

AM4917P substitution

- MOSFET ⓘ Cross-Reference Search

 

AM4917P datasheet

 ..1. Size:326K  analog power
am4917p.pdf pdf_icon

AM4917P

Analog Power AM4917P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 17.5 @ VGS = -4.5V -9.0 Low thermal impedance -20 23 @ VGS = -2.5V -7.9 Fast switching speed 48 @ VGS = -1.8V -5.5 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion C... See More ⇒

 9.1. Size:312K  analog power
am4915p.pdf pdf_icon

AM4917P

Analog Power AM4915P Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 17.5 @ VGS = -10V -9.0 Low thermal impedance -30 23 @ VGS = -4.5V -7.9 Fast switching speed SO-8 Typical Applications Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UN... See More ⇒

 9.2. Size:191K  analog power
am4910n.pdf pdf_icon

AM4917P

Analog Power AM4910N Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 13.5 @ VGS = 10V 10 converters and power management in portable and 30 battery-powered produ... See More ⇒

 9.3. Size:203K  analog power
am4919p.pdf pdf_icon

AM4917P

Analog Power AM4919P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 21 @ VGS = -4.5V 8.2 circuitry. Typical applications are PWMDC-DC -20 35 @ VGS = -2.5V 6.4 converters, ... See More ⇒

Detailed specifications: AM4842N, AM4844NE, AM4874N, AM4890N, AM4892N, AM4902N, AM4910N, AM4915P, IRFP450, AM4919P, AM4920, AM4920N, AM4922N, AM4924N, AM4926N, AM4929P, AM4930N

Keywords - AM4917P MOSFET specs

 AM4917P cross reference

 AM4917P equivalent finder

 AM4917P pdf lookup

 AM4917P substitution

 AM4917P replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.