AM4942N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM4942N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: SOIC-8
Búsqueda de reemplazo de AM4942N MOSFET
AM4942N Datasheet (PDF)
am4942n.pdf

Analog Power AM4942NDual N-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 75 @ VGS = 10V 4.4converters and power management in portable and 40battery-powered products
am4940n.pdf

Analog Power AM4940NDual N-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 22 @ VGS = 10V 8.340battery-powered products
Otros transistores... AM4926N , AM4929P , AM4930N , AM4932N , AM4934N , AM4935P , AM4936N , AM4940N , IRF530 , AM4953 , AM4953P , AM4960N , AM4962NE , AM4963P , AM4964NT , AM4970N , AM4990N .
History: AM30N25-270P | AM30P06-40D | IPI084N06L3G | STP3NB80 | SPD50N03S2-07G | IRFS3307ZPBF | SSF18NS60F
History: AM30N25-270P | AM30P06-40D | IPI084N06L3G | STP3NB80 | SPD50N03S2-07G | IRFS3307ZPBF | SSF18NS60F



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