AM4942N MOSFET. Datasheet pdf. Equivalent
Type Designator: AM4942N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 9 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOIC-8
AM4942N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM4942N Datasheet (PDF)
am4942n.pdf
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Analog Power AM4942NDual N-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 75 @ VGS = 10V 4.4converters and power management in portable and 40battery-powered products
am4940n.pdf
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Analog Power AM4940NDual N-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 22 @ VGS = 10V 8.340battery-powered products
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