All MOSFET. AM4942N Datasheet

 

AM4942N Datasheet and Replacement


   Type Designator: AM4942N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOIC-8
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AM4942N Datasheet (PDF)

 ..1. Size:174K  analog power
 am4942n.pdf pdf_icon

AM4942N

Analog Power AM4942NDual N-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 75 @ VGS = 10V 4.4converters and power management in portable and 40battery-powered products

 9.1. Size:113K  analog power
 am4940n.pdf pdf_icon

AM4942N

Analog Power AM4940NDual N-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 22 @ VGS = 10V 8.340battery-powered products

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History: SML9030-220M | IRFHM792PBF | CED05N8 | AON6794 | FDB86366-F085 | BUZ84 | BL10N70-A

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