AM4990NE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM4990NE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.7 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.081 Ohm

Encapsulados: SO-8

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AM4990NE datasheet

 ..1. Size:318K  analog power
 am4990ne.pdf pdf_icon

AM4990NE

Analog Power AM4990NE Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 81 @ VGS = 10V 4.2 Low thermal impedance 100 92 @ VGS = 4.5V 4.0 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

 7.1. Size:160K  analog power
 am4990n.pdf pdf_icon

AM4990NE

Analog Power AM4990N Dual N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 81 @ VGS = 10V 4.2 converters and power management in portable and 100 battery-powered pro

 9.1. Size:194K  analog power
 am4998n.pdf pdf_icon

AM4990NE

Analog Power AM4998N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat 32 @ VGS = 4.5V 6.5 dissipation. Typical applications are DC-DC 30 converters and power management in portable and 40 @ VGS = 2.5V 5.8 batte

 9.2. Size:320K  analog power
 am4992n.pdf pdf_icon

AM4990NE

Analog Power AM4992N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 430 @ VGS = 10V 1.8 Low thermal impedance 100 480 @ VGS = 4.5V 1.7 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

MOSTRAR MÁS

Otros transistores... AM4953, AM4953P, AM4960N, AM4962NE, AM4963P, AM4964NT, AM4970N, AM4990N, AO3400A, AM4992N, AM4998N, AM50N03-12D, AM50N03-12I, AM50N06-15D, AM50N06-20D, AM50N08-14D, AM50N10-14I