AM4990NE Todos los transistores

 

AM4990NE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM4990NE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 6.7 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.081 Ohm
   Paquete / Cubierta: SO-8
 

 Búsqueda de reemplazo de AM4990NE MOSFET

   - Selección ⓘ de transistores por parámetros

 

AM4990NE Datasheet (PDF)

 ..1. Size:318K  analog power
 am4990ne.pdf pdf_icon

AM4990NE

Analog Power AM4990NEDual N-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)81 @ VGS = 10V4.2 Low thermal impedance 10092 @ VGS = 4.5V4.0 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

 7.1. Size:160K  analog power
 am4990n.pdf pdf_icon

AM4990NE

Analog Power AM4990NDual N-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 81 @ VGS = 10V 4.2converters and power management in portable and 100battery-powered pro

 9.1. Size:194K  analog power
 am4998n.pdf pdf_icon

AM4990NE

Analog Power AM4998NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat 32 @ VGS = 4.5V 6.5dissipation. Typical applications are DC-DC 30converters and power management in portable and 40 @ VGS = 2.5V 5.8batte

 9.2. Size:320K  analog power
 am4992n.pdf pdf_icon

AM4990NE

Analog Power AM4992NN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)430 @ VGS = 10V1.8 Low thermal impedance 100480 @ VGS = 4.5V1.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

MOSTRAR MÁS

Otros transistores... AM4953 , AM4953P , AM4960N , AM4962NE , AM4963P , AM4964NT , AM4970N , AM4990N , RU6888R , AM4992N , AM4998N , AM50N03-12D , AM50N03-12I , AM50N06-15D , AM50N06-20D , AM50N08-14D , AM50N10-14I .

History: PHP36N03LT | IPB100N04S4-H2 | PMXB56EN | 75N75L-TQ2-R | PHB23NQ10LT

 

 
Back to Top

 


 
.