Справочник MOSFET. AM4990NE

 

AM4990NE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM4990NE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6.7 ns
   Cossⓘ - Выходная емкость: 115 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.081 Ohm
   Тип корпуса: SO-8
     - подбор MOSFET транзистора по параметрам

 

AM4990NE Datasheet (PDF)

 ..1. Size:318K  analog power
am4990ne.pdfpdf_icon

AM4990NE

Analog Power AM4990NEDual N-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)81 @ VGS = 10V4.2 Low thermal impedance 10092 @ VGS = 4.5V4.0 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

 7.1. Size:160K  analog power
am4990n.pdfpdf_icon

AM4990NE

Analog Power AM4990NDual N-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 81 @ VGS = 10V 4.2converters and power management in portable and 100battery-powered pro

 9.1. Size:194K  analog power
am4998n.pdfpdf_icon

AM4990NE

Analog Power AM4998NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat 32 @ VGS = 4.5V 6.5dissipation. Typical applications are DC-DC 30converters and power management in portable and 40 @ VGS = 2.5V 5.8batte

 9.2. Size:320K  analog power
am4992n.pdfpdf_icon

AM4990NE

Analog Power AM4992NN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)430 @ VGS = 10V1.8 Low thermal impedance 100480 @ VGS = 4.5V1.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK545 | SI7913DN | NCEP039N10 | MC11N005 | NVMFS5C628N | JCS5N50CT | NCEP026N10F

 

 
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