AM4990NE Specs and Replacement

Type Designator: AM4990NE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm

Package: SO-8

AM4990NE substitution

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AM4990NE datasheet

 ..1. Size:318K  analog power
 am4990ne.pdf pdf_icon

AM4990NE

Analog Power AM4990NE Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 81 @ VGS = 10V 4.2 Low thermal impedance 100 92 @ VGS = 4.5V 4.0 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost... See More ⇒

 7.1. Size:160K  analog power
 am4990n.pdf pdf_icon

AM4990NE

Analog Power AM4990N Dual N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 81 @ VGS = 10V 4.2 converters and power management in portable and 100 battery-powered pro... See More ⇒

 9.1. Size:194K  analog power
 am4998n.pdf pdf_icon

AM4990NE

Analog Power AM4998N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat 32 @ VGS = 4.5V 6.5 dissipation. Typical applications are DC-DC 30 converters and power management in portable and 40 @ VGS = 2.5V 5.8 batte... See More ⇒

 9.2. Size:320K  analog power
 am4992n.pdf pdf_icon

AM4990NE

Analog Power AM4992N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 430 @ VGS = 10V 1.8 Low thermal impedance 100 480 @ VGS = 4.5V 1.7 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI... See More ⇒

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Detailed specifications: AM4953, AM4953P, AM4960N, AM4962NE, AM4963P, AM4964NT, AM4970N, AM4990N, AO3400A, AM4992N, AM4998N, AM50N03-12D, AM50N03-12I, AM50N06-15D, AM50N06-20D, AM50N08-14D, AM50N10-14I

Keywords - AM4990NE MOSFET specs

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