STN1304 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STN1304
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 34 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.225 Ohm
Paquete / Cubierta: SOT-323
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STN1304 Datasheet (PDF)
stn1304.pdf

STN1304 N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteb
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2STD1360, 2STF1360, 2STN1360Low voltage fast-switching NPN power transistorsDatasheet - production dataFeatures4 Very low collector-emitter saturation voltage4 High current gain characteristic 3322 Fast-switching speed 11 SOT-223 SOT-89ApplicationsTAB Emergency lighting LED3 Voltage regulation1 Relay drive TO-252 (DPAK)Descripti
Otros transistores... AM9435P , AM9569D , AM9926 , AM9926N , AM9945N , AM9945NE , AM9N65P , STN1012 , P60NF06 , STN1810 , STN18D20 , STN1NF20 , STN2018 , STN2300 , STN2300A , STN2302 , STN2306 .
History: STN1012 | MPSA80M250B | IXTA08N50D2 | AM9N65P | STN1810 | FDWS86369-F085 | IXTA08N120P
History: STN1012 | MPSA80M250B | IXTA08N50D2 | AM9N65P | STN1810 | FDWS86369-F085 | IXTA08N120P



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