All MOSFET. STN1304 Datasheet

 

STN1304 Datasheet and Replacement


   Type Designator: STN1304
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
   Package: SOT-323
 

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STN1304 Datasheet (PDF)

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STN1304

STN1304 N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteb

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STN1304

2STD1360, 2STF1360, 2STN1360Low voltage fast-switching NPN power transistorsDatasheet - production dataFeatures4 Very low collector-emitter saturation voltage4 High current gain characteristic 3322 Fast-switching speed 11 SOT-223 SOT-89ApplicationsTAB Emergency lighting LED3 Voltage regulation1 Relay drive TO-252 (DPAK)Descripti

Datasheet: AM9435P , AM9569D , AM9926 , AM9926N , AM9945N , AM9945NE , AM9N65P , STN1012 , RU6888R , STN1810 , STN18D20 , STN1NF20 , STN2018 , STN2300 , STN2300A , STN2302 , STN2306 .

History: IXFN38N100P | IPB34CN10N | FQD2N50TF | HFP2N60U | PTP13N60 | P2610BT | DMN3035LWN

Keywords - STN1304 MOSFET datasheet

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