STN1304 MOSFET. Datasheet pdf. Equivalent
Type Designator: STN1304
Marking Code: 04YA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.2 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 34 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
Package: SOT-323
STN1304 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STN1304 Datasheet (PDF)
stn1304.pdf
STN1304 N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteb
2std1360 2stf1360 2stn1360.pdf
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