STN1810 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STN1810
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 68 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.155 Ohm
Paquete / Cubierta: SOP-8
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STN1810 Datasheet (PDF)
stn1810.pdf

STN1810 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These applications such as notebook computer power
stn18d20.pdf

STN18D20 N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION STN18D20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management
Otros transistores... AM9569D , AM9926 , AM9926N , AM9945N , AM9945NE , AM9N65P , STN1012 , STN1304 , IRF730 , STN18D20 , STN1NF20 , STN2018 , STN2300 , STN2300A , STN2302 , STN2306 , STN2342 .
History: CSD75301W1015 | IRFP4228PBF | DMN4008LFG | APM4947K | APT6021SFLLG | CSD83325L
History: CSD75301W1015 | IRFP4228PBF | DMN4008LFG | APM4947K | APT6021SFLLG | CSD83325L



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