STN1810 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STN1810

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 68 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.155 Ohm

Encapsulados: SOP-8

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STN1810 datasheet

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STN1810

STN1810 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These applications such as notebook computer power

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 stn18d20.pdf pdf_icon

STN1810

STN18D20 N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION STN18D20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management

Otros transistores... AM9569D, AM9926, AM9926N, AM9945N, AM9945NE, AM9N65P, STN1012, STN1304, IRFB31N20D, STN18D20, STN1NF20, STN2018, STN2300, STN2300A, STN2302, STN2306, STN2342