STN1810 Specs and Replacement

Type Designator: STN1810

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: SOP-8

STN1810 substitution

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STN1810 datasheet

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STN1810

STN1810 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These applications such as notebook computer power ... See More ⇒

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STN1810

STN18D20 N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION STN18D20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management ... See More ⇒

Detailed specifications: AM9569D, AM9926, AM9926N, AM9945N, AM9945NE, AM9N65P, STN1012, STN1304, IRFB31N20D, STN18D20, STN1NF20, STN2018, STN2300, STN2300A, STN2302, STN2306, STN2342

Keywords - STN1810 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.