STN4102 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STN4102

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.7 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: TO-251 TO-252

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STN4102 datasheet

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STN4102

STN4102 N Channel Enhancement Mode MOSFET 15.0A DESCRIPTION STN4102 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been op

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 stn410d.pdf pdf_icon

STN4102

STN410D N Channel Enhancement Mode MOSFET 15.0A DESCRIPTION STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o

 9.1. Size:870K  stansontech
 stn4110.pdf pdf_icon

STN4102

STN4110 N Channel Enhancement Mode MOSFET 40.0A DESCRIPTION STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) FEATURE 60V/20.0A, RDS(ON) = 10m (Typ.) TO-252 TO-251 @VGS =

 9.2. Size:828K  stansontech
 stn4186d.pdf pdf_icon

STN4102

STN4186D N Channel Enhancement Mode MOSFET 35.0A DESCRIPTION STN4186D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o

MOSTRAR MÁS

Otros transistores... STN3400, STN3400A, STN3404, STN3406, STN3414, STN3446, STN3456, STN3P6F6, IRF730, STN410D, STN4110, STN4130, STN4186D, STN4189D, STN4346, STN4392, STN4402