STN4102
MOSFET. Datasheet pdf. Equivalent
Type Designator: STN4102
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 3.7
nS
Cossⓘ -
Output Capacitance: 60
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032
Ohm
Package:
TO-251
TO-252
STN4102
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STN4102
Datasheet (PDF)
..1. Size:542K stansontech
stn4102.pdf 
STN4102 N Channel Enhancement Mode MOSFET 15.0A DESCRIPTION STN4102 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been op
8.1. Size:492K stansontech
stn410d.pdf
STN410D N Channel Enhancement Mode MOSFET 15.0A DESCRIPTION STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o
9.1. Size:870K stansontech
stn4110.pdf
STN4110 N Channel Enhancement Mode MOSFET 40.0A DESCRIPTION STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) FEATURE 60V/20.0A, RDS(ON) = 10m (Typ.) TO-252 TO-251 @VGS =
9.2. Size:828K stansontech
stn4186d.pdf
STN4186D N Channel Enhancement Mode MOSFET 35.0A DESCRIPTION STN4186D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o
9.3. Size:569K stansontech
stn4189d.pdf
STP4189D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP4189D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been
9.4. Size:812K stansontech
stn4130.pdf
STN4130 N Channel Enhancement Mode MOSFET 30.0A DESCRIPTION STN4130 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. FEATURE PIN CONFIGURATION (D-PAK) 60V/20.0A, RDS(ON) = 40m (Typ.) TO-252 @VGS = 10V 6
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