Справочник MOSFET. STN4102

 

STN4102 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STN4102
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 7 nC
   trⓘ - Время нарастания: 3.7 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: TO-251 TO-252

 Аналог (замена) для STN4102

 

 

STN4102 Datasheet (PDF)

 ..1. Size:542K  stansontech
 stn4102.pdf

STN4102 STN4102

STN4102 N Channel Enhancement Mode MOSFET 15.0A DESCRIPTION STN4102 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been op

 8.1. Size:492K  stansontech
 stn410d.pdf

STN4102 STN4102

STN410D N Channel Enhancement Mode MOSFET 15.0A DESCRIPTION STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o

 9.1. Size:870K  stansontech
 stn4110.pdf

STN4102 STN4102

STN4110 N Channel Enhancement Mode MOSFET 40.0A DESCRIPTION STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) FEATURE 60V/20.0A, RDS(ON) = 10m (Typ.) TO-252 TO-251 @VGS =

 9.2. Size:828K  stansontech
 stn4186d.pdf

STN4102 STN4102

STN4186D N Channel Enhancement Mode MOSFET 35.0A DESCRIPTION STN4186D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o

 9.3. Size:569K  stansontech
 stn4189d.pdf

STN4102 STN4102

STP4189D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP4189D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been

 9.4. Size:812K  stansontech
 stn4130.pdf

STN4102 STN4102

STN4130 N Channel Enhancement Mode MOSFET 30.0A DESCRIPTION STN4130 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. FEATURE PIN CONFIGURATION (D-PAK) 60V/20.0A, RDS(ON) = 40m (Typ.) TO-252 @VGS = 10V 6

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