IRFR3504PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR3504PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 53 nS

Cossⓘ - Capacitancia de salida: 580 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0092 Ohm

Encapsulados: TO-252AA

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IRFR3504PBF datasheet

 ..1. Size:324K  international rectifier
 irfr3504pbf.pdf pdf_icon

IRFR3504PBF

PD - 95315B IRFR3504PbF IRFU3504PbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.2m G Description This HEXFET Power MOSFET utilizes the latest processing ID = 30A techniques to achieve extremely low on-resistan

 6.1. Size:593K  international rectifier
 irfr3504.pdf pdf_icon

IRFR3504PBF

PD - 94499A AUTOMOTIVE MOSFET IRFR3504 IRFU3504 Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 40V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 9.2m G Description Specifically designed for Automotive applications, this HEXFET ID = 30A Power MOSFET utilizes the l

 6.2. Size:228K  international rectifier
 auirfr3504.pdf pdf_icon

IRFR3504PBF

PD - 97687A AUTOMOTIVE GRADE AUIRFR3504 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l 175 C Operating Temperature RDS(on) typ. l Fast Switching 7.8m l Fully Avalanche Rated max 9.2m G l Repetitive Avalanche Allowed ID (Silicon Limited) 87A up to Tjmax S ID (Package Limited) l Lead-Free, RoHS Compliant 56A l Automotiv

 6.3. Size:331K  international rectifier
 irfr3504zpbf.pdf pdf_icon

IRFR3504PBF

PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 9.0m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

MOSTRAR MÁS

Otros transistores... STP265N6F6AG, STP26NM60ND, STP270N04, IRFR3303PBF, IRFR3410PBF, IRFR3411PBF, IRFR3412PBF, IRFR3418PBF, IRF4905, IRFR3504ZPBF, IRFR3505PBF, IRFR3518PBF, IRFR3607PBF, IRFR3704, IRFR3704PBF, IRFR3704ZPBF, IRFR3706