IRFR3504PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR3504PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 48
nC
trⓘ - Rise Time: 53
nS
Cossⓘ -
Output Capacitance: 580
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0092
Ohm
Package:
TO-252AA
IRFR3504PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR3504PBF
Datasheet (PDF)
..1. Size:324K international rectifier
irfr3504pbf.pdf
PD - 95315BIRFR3504PbFIRFU3504PbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance 175C Operating TemperatureD Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 9.2mGDescriptionThis HEXFET Power MOSFET utilizes the latest processingID = 30Atechniques to achieve extremely low on-resistan
6.1. Size:593K international rectifier
irfr3504.pdf
PD - 94499AAUTOMOTIVE MOSFET IRFR3504IRFU3504FeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 9.2mGDescriptionSpecifically designed for Automotive applications, this HEXFETID = 30APower MOSFET utilizes the l
6.2. Size:228K international rectifier
auirfr3504.pdf
PD - 97687AAUTOMOTIVE GRADEAUIRFR3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Ratedmax 9.2mGl Repetitive Avalanche AllowedID (Silicon Limited)87Aup to TjmaxSID (Package Limited)l Lead-Free, RoHS Compliant 56Al Automotiv
6.3. Size:331K international rectifier
irfr3504zpbf.pdf
PD - 95521BIRFR3504ZPbFIRFU3504ZPbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 9.0m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re
6.4. Size:268K international rectifier
auirfr3504ztr.pdf
PD - 97492AUIRFR3504ZAUTOMOTIVE GRADEHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 40V Low On-Resistance 175C Operating TemperatureRDS(on) max.9.0m Fast SwitchingGID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited)42AS Automotive Qualified *DescriptionDSpecifical
6.5. Size:331K infineon
irfr3504zpbf irfu3504zpbf.pdf
PD - 95521BIRFR3504ZPbFIRFU3504ZPbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 9.0m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re
6.6. Size:664K infineon
auirfr3504z.pdf
AUTOMOTIVE GRADE AUIRFR3504Z Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 9.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 77A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Description
6.7. Size:242K inchange semiconductor
irfr3504z.pdf
isc N-Channel MOSFET Transistor IRFR3504Z, IIRFR3504ZFEATURESStatic drain-source on-resistance:RDS(on)9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gate
Datasheet: WPB4002
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