STP4925 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STP4925

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOP-8

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STP4925 datasheet

 ..1. Size:431K  stansontech
 stp4925.pdf pdf_icon

STP4925

STP4925 Dual P Channel Enhancement Mode MOSFET -7.2A DESCRIPTION STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power

 9.1. Size:386K  semtron
 stp4953a.pdf pdf_icon

STP4925

STP4953A -30V Dual P-Channel Fast Switching MOSFETs DESCRIPTION FEATURE The STP4953A is the Dual P-Channel logic -30V/-5.3A, RDS(ON) =46m (typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.6A, RDS(ON) =75m (typ.)@VGS =-4.5V produced using high cell density. advanced trench Super high density cell design for extremely low technology

 9.2. Size:325K  stansontech
 stp4931.pdf pdf_icon

STP4925

STP4931 STP4931 STP4931 STP4931 Dual P Channel Enhancement Mode MOSFET -8.5A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

 9.3. Size:485K  stansontech
 stp4953.pdf pdf_icon

STP4925

STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backli

MOSTRAR MÁS

Otros transistores... STP4435, STP4435A, STP45N10F7, STP45N65M5, STP45NE06, STP45NE06FP, STP46NF30, STP4803, IRFP260N, STP4931, STP4953, STP4953A, STP4N80K5, STP4NA90, STP4NA90FI, STP4NB100, STP4NB50