STP4953A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STP4953A

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.5 nS

Cossⓘ - Capacitancia de salida: 83 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: SOP-8

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STP4953A datasheet

 ..1. Size:386K  semtron
 stp4953a.pdf pdf_icon

STP4953A

STP4953A -30V Dual P-Channel Fast Switching MOSFETs DESCRIPTION FEATURE The STP4953A is the Dual P-Channel logic -30V/-5.3A, RDS(ON) =46m (typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.6A, RDS(ON) =75m (typ.)@VGS =-4.5V produced using high cell density. advanced trench Super high density cell design for extremely low technology

 7.1. Size:485K  stansontech
 stp4953.pdf pdf_icon

STP4953A

STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backli

 9.1. Size:431K  stansontech
 stp4925.pdf pdf_icon

STP4953A

STP4925 Dual P Channel Enhancement Mode MOSFET -7.2A DESCRIPTION STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power

 9.2. Size:325K  stansontech
 stp4931.pdf pdf_icon

STP4953A

STP4931 STP4931 STP4931 STP4931 Dual P Channel Enhancement Mode MOSFET -8.5A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

MOSTRAR MÁS

Otros transistores... STP45N65M5, STP45NE06, STP45NE06FP, STP46NF30, STP4803, STP4925, STP4931, STP4953, IRF3710, STP4N80K5, STP4NA90, STP4NA90FI, STP4NB100, STP4NB50, STP4NB80, STP4NM60, STP50NE08