STP4953A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: STP4953A
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 11.5 ns
Cossⓘ - Выходная емкость: 83 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
Тип корпуса: SOP-8
Аналог (замена) для STP4953A
STP4953A Datasheet (PDF)
stp4953a.pdf

STP4953A -30V Dual P-Channel Fast Switching MOSFETsDESCRIPTIONFEATUREThe STP4953A is the Dual P-Channel logic -30V/-5.3A, RDS(ON) =46m(typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.6A, RDS(ON) =75m(typ.)@VGS =-4.5V produced using high cell density. advanced trench Super high density cell design for extremely low technology
stp4953.pdf

STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backli
stp4925.pdf

STP4925 Dual P Channel Enhancement Mode MOSFET -7.2A DESCRIPTION STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power
stp4931.pdf

STP4931STP4931STP4931STP4931Dual P Channel Enhancement Mode MOSFET-8.5ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTP4931 is the dual P-Channel logic enhancement mode power field effect transistorsare produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly
Другие MOSFET... STP45N65M5 , STP45NE06 , STP45NE06FP , STP46NF30 , STP4803 , STP4925 , STP4931 , STP4953 , P55NF06 , STP4N80K5 , STP4NA90 , STP4NA90FI , STP4NB100 , STP4NB50 , STP4NB80 , STP4NM60 , STP50NE08 .
History: SML10S75XX | RFD16N06LE | SSG4499P | SML10L100 | STP8NM60ND | 4800
History: SML10S75XX | RFD16N06LE | SSG4499P | SML10L100 | STP8NM60ND | 4800



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