All MOSFET. STP4953A Datasheet

 

STP4953A MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP4953A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.3 nC
   trⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOP-8

 STP4953A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP4953A Datasheet (PDF)

 ..1. Size:386K  semtron
 stp4953a.pdf

STP4953A STP4953A

STP4953A -30V Dual P-Channel Fast Switching MOSFETsDESCRIPTIONFEATUREThe STP4953A is the Dual P-Channel logic -30V/-5.3A, RDS(ON) =46m(typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.6A, RDS(ON) =75m(typ.)@VGS =-4.5V produced using high cell density. advanced trench Super high density cell design for extremely low technology

 7.1. Size:485K  stansontech
 stp4953.pdf

STP4953A STP4953A

STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backli

 9.1. Size:431K  stansontech
 stp4925.pdf

STP4953A STP4953A

STP4925 Dual P Channel Enhancement Mode MOSFET -7.2A DESCRIPTION STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power

 9.2. Size:325K  stansontech
 stp4931.pdf

STP4953A STP4953A

STP4931STP4931STP4931STP4931Dual P Channel Enhancement Mode MOSFET-8.5ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTP4931 is the dual P-Channel logic enhancement mode power field effect transistorsare produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AUIRL2910S | STP70L60 | NCE70N600K | NCE70N380K | SE2305A

 

 
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