STP6623 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP6623
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.1 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 18 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 47 nC
Tiempo de subida (tr): 6.1 nS
Conductancia de drenaje-sustrato (Cd): 179 pF
Resistencia entre drenaje y fuente RDS(on): 0.03 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de MOSFET STP6623
STP6623 Datasheet (PDF)
stp6623.pdf
STP6623 P Channel Enhancement Mode MOSFET -18.0ASCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane
stp6625.pdf
STP6625 P Channel Enhancement Mode MOSFET -5.0A SCRIPTION STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane
stp6621.pdf
STP6621 P Channel Enhancement Mode MOSFET -18.0ASCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane
stp6635gh.pdf
STP6635GH P Channel Enhancement Mode MOSFET -40.0A DESCRIPTION STP6635GH is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has b
stp6635gh.pdf
STP6635GHwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETA
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