STP6623 Specs and Replacement

Type Designator: STP6623

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.1 nS

Cossⓘ - Output Capacitance: 179 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP-8

STP6623 substitution

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STP6623 datasheet

 ..1. Size:449K  stansontech
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STP6623

STP6623 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane... See More ⇒

 8.1. Size:807K  stansontech
 stp6625.pdf pdf_icon

STP6623

STP6625 P Channel Enhancement Mode MOSFET -5.0A SCRIPTION STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ... See More ⇒

 8.2. Size:448K  stansontech
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STP6623

STP6621 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane... See More ⇒

 9.1. Size:497K  stansontech
 stp6635gh.pdf pdf_icon

STP6623

STP6635GH P Channel Enhancement Mode MOSFET -40.0A DESCRIPTION STP6635GH is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has b... See More ⇒

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Detailed specifications: STP60NE06-16FP, STP60NE06L-16, STP60NE06L-16FP, STP60NF06LFP, STP60NH2LL, STP6308, STP6506, STP6621, TK10A60D, STP6635GH, STP6N60M2, STP6N65M2, STP6N80K5, STP6NB90, STP6NC60, STP6NK60ZFP, STP6NK70Z

Keywords - STP6623 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.