STP6623. Аналоги и основные параметры

Наименование производителя: STP6623

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.1 ns

Cossⓘ - Выходная емкость: 179 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm

Тип корпуса: SOP-8

Аналог (замена) для STP6623

- подборⓘ MOSFET транзистора по параметрам

 

STP6623 даташит

 ..1. Size:449K  stansontech
 stp6623.pdf pdf_icon

STP6623

STP6623 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane

 8.1. Size:807K  stansontech
 stp6625.pdf pdf_icon

STP6623

STP6625 P Channel Enhancement Mode MOSFET -5.0A SCRIPTION STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane

 8.2. Size:448K  stansontech
 stp6621.pdf pdf_icon

STP6623

STP6621 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane

 9.1. Size:497K  stansontech
 stp6635gh.pdf pdf_icon

STP6623

STP6635GH P Channel Enhancement Mode MOSFET -40.0A DESCRIPTION STP6635GH is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has b

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