IRFR5305PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR5305PBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 31 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 66 nS
Cossⓘ - Capacitancia de salida: 520 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de IRFR5305PBF MOSFET
IRFR5305PBF Datasheet (PDF)
irfr5305pbf irfu5305pbf.pdf

PD-95025AIRFR5305PbFIRFU5305PbFHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRFR5305)Dl Straight Lead (IRFU5305) VDSS = -55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.065l Fully Avalanche RatedGl Lead-FreeID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achie
irfr5305pbf.pdf

PD-95025AIRFR5305PbFIRFU5305PbFHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRFR5305)Dl Straight Lead (IRFU5305) VDSS = -55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.065l Fully Avalanche RatedGl Lead-FreeID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achie
auirfr5305tr.pdf

PD-96341AUTOMOTIVE MOSFETAUIRFR5305AUIRFU5305HEXFET Power MOSFETDFeaturesV(BR)DSS -55V Advanced Planar Technology Low On-ResistanceRDS(on) max.0.065 Dynamic dV/dT Rating G 175C Operating Temperature Fast Switching S ID -31A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant DD Automotive Qualified *SDescri
irfr5305.pdf

PD - 91402AIRFR/U5305HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR5305)VDSS = -55V Straight Lead (IRFU5305) Advanced Process TechnologyRDS(on) = 0.065 Fast SwitchingG Fully Avalanche RatedID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely lowon-resistanc
Otros transistores... IRFR420B , IRFR420PBF , IRFR430A , IRFR430APBF , IRFR4510PBF , IRFR4615PBF , IRFR4620PBF , IRFR48ZPBF , IRF540N , IRFR540ZPBF , IRFR5410PBF , IRFR5505GPBF , IRFR5505PBF , IRFR6215PBF , IRFR9010PBF , IRFR9014PBF , IRFR9020PBF .
History: IXFT24N80P | BRCS020N06SBD | IPP042N03LG | FK7VS-12 | NP80N04DHE | IRFP344PBF | STU5N60M2
History: IXFT24N80P | BRCS020N06SBD | IPP042N03LG | FK7VS-12 | NP80N04DHE | IRFP344PBF | STU5N60M2



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