IRFR5305PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFR5305PBF
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 110 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 31 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 63 nC
Время нарастания (tr): 66 ns
Выходная емкость (Cd): 520 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.065 Ohm
Тип корпуса: TO-252
Аналог (замена) для IRFR5305PBF
IRFR5305PBF Datasheet (PDF)
irfr5305pbf.pdf
PD-95025AIRFR5305PbFIRFU5305PbFHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRFR5305)Dl Straight Lead (IRFU5305) VDSS = -55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.065l Fully Avalanche RatedGl Lead-FreeID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achie
irfr5305pbf irfu5305pbf.pdf
PD-95025AIRFR5305PbFIRFU5305PbFHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRFR5305)Dl Straight Lead (IRFU5305) VDSS = -55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.065l Fully Avalanche RatedGl Lead-FreeID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achie
auirfr5305tr.pdf
PD-96341AUTOMOTIVE MOSFETAUIRFR5305AUIRFU5305HEXFET Power MOSFETDFeaturesV(BR)DSS -55V Advanced Planar Technology Low On-ResistanceRDS(on) max.0.065 Dynamic dV/dT Rating G 175C Operating Temperature Fast Switching S ID -31A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant DD Automotive Qualified *SDescri
irfr5305.pdf
PD - 91402AIRFR/U5305HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR5305)VDSS = -55V Straight Lead (IRFU5305) Advanced Process TechnologyRDS(on) = 0.065 Fast SwitchingG Fully Avalanche RatedID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely lowon-resistanc
auirfr5305 auirfu5305.pdf
AUIRFR5305 AUTOMOTIVE GRADE AUIRFU5305 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.065 Dynamic dv/dt Rating ID -31A 175C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S D
irfr5305.pdf
IRFR5305P-Channel 60 V (D-S) MOSFETDescriptionThis P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.D It can be used in a wide variety of applications.G Features S 1) VDS=-60V,ID=-30A,RDS(ON)
irfr5305trpbf.pdf
IRFR5305TRPBFwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parame
irfr5305.pdf
isc P-Channel MOSFET Transistor IRFR5305FEATURESStatic drain-source on-resistance:RDS(on)65m(@V = -10V; I = -16A)GS DAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFast switching application.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
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