IRFR5305PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR5305PBF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 31
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 63
nC
trⓘ - Rise Time: 66
nS
Cossⓘ -
Output Capacitance: 520
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package:
TO-252
IRFR5305PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR5305PBF
Datasheet (PDF)
..1. Size:250K international rectifier
irfr5305pbf.pdf 
PD-95025AIRFR5305PbFIRFU5305PbFHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRFR5305)Dl Straight Lead (IRFU5305) VDSS = -55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.065l Fully Avalanche RatedGl Lead-FreeID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achie
..2. Size:244K infineon
irfr5305pbf irfu5305pbf.pdf
PD-95025AIRFR5305PbFIRFU5305PbFHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRFR5305)Dl Straight Lead (IRFU5305) VDSS = -55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.065l Fully Avalanche RatedGl Lead-FreeID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achie
6.1. Size:300K international rectifier
auirfr5305tr.pdf
PD-96341AUTOMOTIVE MOSFETAUIRFR5305AUIRFU5305HEXFET Power MOSFETDFeaturesV(BR)DSS -55V Advanced Planar Technology Low On-ResistanceRDS(on) max.0.065 Dynamic dV/dT Rating G 175C Operating Temperature Fast Switching S ID -31A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant DD Automotive Qualified *SDescri
6.2. Size:156K international rectifier
irfr5305.pdf
PD - 91402AIRFR/U5305HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR5305)VDSS = -55V Straight Lead (IRFU5305) Advanced Process TechnologyRDS(on) = 0.065 Fast SwitchingG Fully Avalanche RatedID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely lowon-resistanc
6.3. Size:528K infineon
auirfr5305 auirfu5305.pdf
AUIRFR5305 AUTOMOTIVE GRADE AUIRFU5305 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.065 Dynamic dv/dt Rating ID -31A 175C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S D
6.4. Size:3157K slkor
irfr5305.pdf
IRFR5305P-Channel 60 V (D-S) MOSFETDescriptionThis P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.D It can be used in a wide variety of applications.G Features S 1) VDS=-60V,ID=-30A,RDS(ON)
6.5. Size:854K cn vbsemi
irfr5305trpbf.pdf
IRFR5305TRPBFwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parame
6.6. Size:285K inchange semiconductor
irfr5305.pdf
isc P-Channel MOSFET Transistor IRFR5305FEATURESStatic drain-source on-resistance:RDS(on)65m(@V = -10V; I = -16A)GS DAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFast switching application.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
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