IRFR5505PBF Todos los transistores

 ..1. Size:270K  international rectifier
 irfr5505pbf irfu5505pbf.pdf

PD - 95077B IRFR5505PbF IRFU5505PbF Lead-Free Halogen-Free 1 www.irf.com 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 2 www.irf.com 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 3 www.irf.com 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 4 www.irf.com 2012 International Rectifier November 12th , 2012

 6.1. Size:113K  international rectifier
 irfr5505 irfu5505.pdf

PD - 9.1610B IRFR/U5505 HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505) RDS(on) = 0.11 Advanced Process Technology G Fast Switching ID = -18A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 6.2. Size:1107K  international rectifier
 auirfr5505tr.pdf

PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features HEXFET Power MOSFET Advanced Planar Technology D Low On-Resistance V(BR)DSS -55V P-Channel Dynamic dV/dT Rating RDS(on) max. 0.11 G 150 C Operating Temperature Fast Switching S Fully Avalanche Rated ID -18A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified

 6.3. Size:108K  international rectifier
 irfr5505.pdf

PD - 9.1610B IRFR/U5505 HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505) RDS(on) = 0.11 Advanced Process Technology G Fast Switching ID = -18A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 6.4. Size:1643K  international rectifier
 irfr5505gpbf.pdf

PD - 96182 IRFR5505GPbF IRFU5505GPbF Lead-Free Halogen-Free D S S D G G D-Pak I-Pak IRFR5505GPbF IRFU5505GPbF www.irf.com 1 09/29/08 IRFR/U5505GPbF 2 www.irf.com IRFR/U5505GPbF www.irf.com 3 IRFR/U5505GPbF 4 www.irf.com IRFR/U5505GPbF www.irf.com 5 IRFR/U5505GPbF 6 www.irf.com IRFR/U5505GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Consider

 6.5. Size:532K  international rectifier
 auirfu5505 auirfr5505.pdf

AUIRFR5505 AUTOMOTIVE GRADE AUIRFU5505 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.11 P-Channel ID -18A Dynamic dv/dt Rating 150 C Operating Temperature Fast Switching D Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie

 6.6. Size:843K  cn vbsemi
 irfr5505tr.pdf

IRFR5505TR www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge C