IRFR5505PBF. Аналоги и основные параметры

Наименование производителя: IRFR5505PBF

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 57 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 28 ns

Cossⓘ - Выходная емкость: 270 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm

Тип корпуса: TO-252

Аналог (замена) для IRFR5505PBF

- подборⓘ MOSFET транзистора по параметрам

 

IRFR5505PBF даташит

 ..1. Size:270K  international rectifier
irfr5505pbf irfu5505pbf.pdfpdf_icon

IRFR5505PBF

PD - 95077B IRFR5505PbF IRFU5505PbF Lead-Free Halogen-Free 1 www.irf.com 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 2 www.irf.com 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 3 www.irf.com 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 4 www.irf.com 2012 International Rectifier November 12th , 2012

 6.1. Size:113K  international rectifier
irfr5505 irfu5505.pdfpdf_icon

IRFR5505PBF

PD - 9.1610B IRFR/U5505 HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505) RDS(on) = 0.11 Advanced Process Technology G Fast Switching ID = -18A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 6.2. Size:1107K  international rectifier
auirfr5505tr.pdfpdf_icon

IRFR5505PBF

PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features HEXFET Power MOSFET Advanced Planar Technology D Low On-Resistance V(BR)DSS -55V P-Channel Dynamic dV/dT Rating RDS(on) max. 0.11 G 150 C Operating Temperature Fast Switching S Fully Avalanche Rated ID -18A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified

 6.3. Size:108K  international rectifier
irfr5505.pdfpdf_icon

IRFR5505PBF

PD - 9.1610B IRFR/U5505 HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505) RDS(on) = 0.11 Advanced Process Technology G Fast Switching ID = -18A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

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