IRFR5505PBF - Даташиты. Аналоги. Основные параметры
Наименование производителя: IRFR5505PBF
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 57 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 28 ns
Cossⓘ - Выходная емкость: 270 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: TO-252
Аналог (замена) для IRFR5505PBF
IRFR5505PBF Datasheet (PDF)
irfr5505pbf irfu5505pbf.pdf

PD - 95077BIRFR5505PbFIRFU5505PbF Lead-Free Halogen-Free 1 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 2 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 3 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 4 www.irf.com 2012 International Rectifier November 12th , 2012
irfr5505 irfu5505.pdf

PD - 9.1610BIRFR/U5505HEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505)RDS(on) = 0.11 Advanced Process TechnologyG Fast SwitchingID = -18A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low
auirfr5505tr.pdf

PD - 96342AUTOMOTIVE GRADEAUIRFR5505AUIRFU5505FeaturesHEXFET Power MOSFET Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS -55V P-Channel Dynamic dV/dT RatingRDS(on) max.0.11G 150C Operating Temperature Fast SwitchingS Fully Avalanche RatedID -18A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantD Automotive Qualified
irfr5505.pdf

PD - 9.1610BIRFR/U5505HEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505)RDS(on) = 0.11 Advanced Process TechnologyG Fast SwitchingID = -18A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low
Другие MOSFET... IRFR4510PBF , IRFR4615PBF , IRFR4620PBF , IRFR48ZPBF , IRFR5305PBF , IRFR540ZPBF , IRFR5410PBF , IRFR5505GPBF , IRF640 , IRFR6215PBF , IRFR9010PBF , IRFR9014PBF , IRFR9020PBF , IRFR9024NPBF , IRFR9024PBF , IRFR9110PBF , IRFR9120NPBF .
History: APT12040JVR | RJK0652DPB | NP80N055CHE | DACMI250N120BZK3 | NP80N04MDG | FMD40-06KC | IPP052N06L3G
History: APT12040JVR | RJK0652DPB | NP80N055CHE | DACMI250N120BZK3 | NP80N04MDG | FMD40-06KC | IPP052N06L3G



Список транзисторов
Обновления
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