IRFR5505PBF. Аналоги и основные параметры
Наименование производителя: IRFR5505PBF
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 57 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 28 ns
Cossⓘ - Выходная емкость: 270 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: TO-252
Аналог (замена) для IRFR5505PBF
- подборⓘ MOSFET транзистора по параметрам
IRFR5505PBF даташит
irfr5505pbf irfu5505pbf.pdf
PD - 95077B IRFR5505PbF IRFU5505PbF Lead-Free Halogen-Free 1 www.irf.com 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 2 www.irf.com 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 3 www.irf.com 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 4 www.irf.com 2012 International Rectifier November 12th , 2012
irfr5505 irfu5505.pdf
PD - 9.1610B IRFR/U5505 HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505) RDS(on) = 0.11 Advanced Process Technology G Fast Switching ID = -18A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
auirfr5505tr.pdf
PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features HEXFET Power MOSFET Advanced Planar Technology D Low On-Resistance V(BR)DSS -55V P-Channel Dynamic dV/dT Rating RDS(on) max. 0.11 G 150 C Operating Temperature Fast Switching S Fully Avalanche Rated ID -18A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified
irfr5505.pdf
PD - 9.1610B IRFR/U5505 HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505) RDS(on) = 0.11 Advanced Process Technology G Fast Switching ID = -18A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
Другие IGBT... IRFR4510PBF, IRFR4615PBF, IRFR4620PBF, IRFR48ZPBF, IRFR5305PBF, IRFR540ZPBF, IRFR5410PBF, IRFR5505GPBF, IRFZ44, IRFR6215PBF, IRFR9010PBF, IRFR9014PBF, IRFR9020PBF, IRFR9024NPBF, IRFR9024PBF, IRFR9110PBF, IRFR9120NPBF
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
Popular searches
pa110bda | 2sb1243 | a1123 transistor | skd502t datasheet | svf7n65f | 2sc1419 datasheet | 2n4249 datasheet | tip130







