IRFR5505PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR5505PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO-252
IRFR5505PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR5505PBF Datasheet (PDF)
irfr5505pbf irfu5505pbf.pdf
PD - 95077AIRFR5505PbFIRFU5505PbF Lead-Freewww.irf.com 11/10/05IRFR/U5505PbF2 www.irf.comIRFR/U5505PbFwww.irf.com 3IRFR/U5505PbF4 www.irf.comIRFR/U5505PbFwww.irf.com 5IRFR/U5505PbF6 www.irf.comIRFR/U5505PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance
irfr5505pbf irfu5505pbf.pdf
PD - 95077BIRFR5505PbFIRFU5505PbF Lead-Free Halogen-Free 1 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 2 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 3 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 4 www.irf.com 2012 International Rectifier November 12th , 2012
auirfr5505tr.pdf
PD - 96342AUTOMOTIVE GRADEAUIRFR5505AUIRFU5505FeaturesHEXFET Power MOSFET Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS -55V P-Channel Dynamic dV/dT RatingRDS(on) max.0.11G 150C Operating Temperature Fast SwitchingS Fully Avalanche RatedID -18A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantD Automotive Qualified
irfr5505.pdf
PD - 9.1610BIRFR/U5505HEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505)RDS(on) = 0.11 Advanced Process TechnologyG Fast SwitchingID = -18A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low
irfr5505gpbf.pdf
PD - 96182IRFR5505GPbFIRFU5505GPbF Lead-Free Halogen-FreeDS SDG GD-Pak I-PakIRFR5505GPbF IRFU5505GPbFwww.irf.com 109/29/08IRFR/U5505GPbF2 www.irf.comIRFR/U5505GPbFwww.irf.com 3IRFR/U5505GPbF4 www.irf.comIRFR/U5505GPbFwww.irf.com 5IRFR/U5505GPbF6 www.irf.comIRFR/U5505GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Consider
auirfu5505 auirfr5505.pdf
AUIRFR5505 AUTOMOTIVE GRADE AUIRFU5505 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.11 P-Channel ID -18A Dynamic dv/dt Rating 150C Operating Temperature Fast Switching D Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie
irfr5505 irfu5505.pdf
PD - 9.1610BIRFR/U5505HEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505)RDS(on) = 0.11 Advanced Process TechnologyG Fast SwitchingID = -18A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low
irfr5505tr.pdf
IRFR5505TRwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge C
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
