IRFS3006PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFS3006PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 195 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 182 nS

Cossⓘ - Capacitancia de salida: 1020 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm

Encapsulados: TO-263

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IRFS3006PBF datasheet

 ..1. Size:361K  international rectifier
 irfs3006pbf irfsl3006pbf.pdf pdf_icon

IRFS3006PBF

PD - 96188 IRFS3006PbF IRFSL3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.0m l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/

 6.1. Size:308K  international rectifier
 irfs3006-7ppbf.pdf pdf_icon

IRFS3006PBF

PD - 96187 IRFS3006-7PPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.5m l Uninterruptible Power Supply max. 2.1m l High Speed Power Switching G l Hard Switched and High Frequency Circuits ID (Silicon Limited) 293A S ID (Package Limited) 240A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugged

 6.2. Size:667K  infineon
 auirfs3006.pdf pdf_icon

IRFS3006PBF

AUTOMOTIVE GRADE AUIRFS3006 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance max. Dynamic dv/dt Rating 2.5m 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl

 6.3. Size:682K  infineon
 auirfs3006-7p.pdf pdf_icon

IRFS3006PBF

AUIRFS3006-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Dynamic dV/dT Rating max. 2.1m 175 C Operating Temperature ID (Silicon Limited) 293A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS

MOSTRAR MÁS

Otros transistores... IRFS17N20DPBF, IRFS23N20DPBF, IRFS244, IRFS250B, IRFS254, IRFS3004-7PPBF, IRFS3004PBF, IRFS3006-7PPBF, IRF4905, IRFS3107-7PPBF, IRFS3107PBF, IRFS31N20DPBF, IRFS3206PBF, IRFS3207PBF, IRFS3207ZPBF, IRFS3306PBF, IRFS3307PBF