All MOSFET. IRFS3006PBF Datasheet

 

IRFS3006PBF Datasheet and Replacement


   Type Designator: IRFS3006PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 195 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 200 nC
   tr ⓘ - Rise Time: 182 nS
   Cossⓘ - Output Capacitance: 1020 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-263
 

 IRFS3006PBF substitution

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IRFS3006PBF Datasheet (PDF)

 ..1. Size:361K  international rectifier
 irfs3006pbf irfsl3006pbf.pdf pdf_icon

IRFS3006PBF

PD - 96188IRFS3006PbFIRFSL3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/

 6.1. Size:308K  international rectifier
 irfs3006-7ppbf.pdf pdf_icon

IRFS3006PBF

PD - 96187IRFS3006-7PPbFHEXFET Power MOSFETApplications DVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.5ml Uninterruptible Power Supply max. 2.1ml High Speed Power SwitchingGl Hard Switched and High Frequency CircuitsID (Silicon Limited)293ASID (Package Limited)240ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRugged

 6.2. Size:667K  infineon
 auirfs3006.pdf pdf_icon

IRFS3006PBF

AUTOMOTIVE GRADE AUIRFS3006 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance max. Dynamic dv/dt Rating 2.5m 175C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl

 6.3. Size:682K  infineon
 auirfs3006-7p.pdf pdf_icon

IRFS3006PBF

AUIRFS3006-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Dynamic dV/dT Rating max. 2.1m 175C Operating Temperature ID (Silicon Limited) 293A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS

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History: IRF9530NSPBF

Keywords - IRFS3006PBF MOSFET datasheet

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