IRFS3006PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFS3006PBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 375 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 195 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 182 ns
Выходная емкость (Cd): 1020 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0025 Ohm
Тип корпуса: TO-263
Аналог (замена) для IRFS3006PBF
IRFS3006PBF Datasheet (PDF)
irfs3006pbf irfsl3006pbf.pdf
PD - 96188IRFS3006PbFIRFSL3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/
irfs3006pbf irfsl3006pbf.pdf
PD - 96188IRFS3006PbFIRFSL3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/
irfs3006-7ppbf.pdf
PD - 96187IRFS3006-7PPbFHEXFET Power MOSFETApplications DVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.5ml Uninterruptible Power Supply max. 2.1ml High Speed Power SwitchingGl Hard Switched and High Frequency CircuitsID (Silicon Limited)293ASID (Package Limited)240ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRugged
irfs3006-7ppbf.pdf
PD - 96187IRFS3006-7PPbFHEXFET Power MOSFETApplications DVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.5ml Uninterruptible Power Supply max. 2.1ml High Speed Power SwitchingGl Hard Switched and High Frequency CircuitsID (Silicon Limited)293ASID (Package Limited)240ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRugged
auirfs3006.pdf
AUTOMOTIVE GRADE AUIRFS3006 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance max. Dynamic dv/dt Rating 2.5m 175C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl
auirfs3006-7p.pdf
AUIRFS3006-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Dynamic dV/dT Rating max. 2.1m 175C Operating Temperature ID (Silicon Limited) 293A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS
irfs3006.pdf
isc N-Channel MOSFET Transistor IRFS3006FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
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