IRFS4115PBF Todos los transistores

 

IRFS4115PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFS4115PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 195 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 490 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0121 Ohm
   Paquete / Cubierta: TO-263

 Búsqueda de reemplazo de MOSFET IRFS4115PBF

 

Principales características: IRFS4115PBF

 ..1. Size:286K  international rectifier
irfs4115pbf irfsl4115pbf.pdf pdf_icon

IRFS4115PBF

PD - 96198A IRFS4115PbF IRFSL4115PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 10.3m l High Speed Power Switching max. 12.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 99A Benefits ID (Package Limited) 195A S l Improved Gate, Avalanche and Dynamic

 ..2. Size:204K  inchange semiconductor
irfs4115pbf.pdf pdf_icon

IRFS4115PBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFS4115PbF FEATURES With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

 6.1. Size:302K  international rectifier
irfs4115-7ppbf.pdf pdf_icon

IRFS4115PBF

PD -97147 IRFS4115-7PPbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 10.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 11.8m ID 105A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance

 6.2. Size:680K  infineon
auirfs4115-7p.pdf pdf_icon

IRFS4115PBF

AUIRFS4115-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 150V Ultra Low On-Resistance RDS(on) typ. 10m Dynamic dV/dT Rating max. 11.8m 175 C Operating Temperature ID 105A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Descrip

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