All MOSFET. IRFS4115PBF Datasheet

 

IRFS4115PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFS4115PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 195 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 77 nC

Rise Time (tr): 73 nS

Drain-Source Capacitance (Cd): 490 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0121 Ohm

Package: TO-263

IRFS4115PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS4115PBF Datasheet (PDF)

1.1. irfs4115pbf.pdf Size:286K _upd

IRFS4115PBF
IRFS4115PBF

PD - 96198A IRFS4115PbF IRFSL4115PbF HEXFET® Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 10.3m l High Speed Power Switching max. 12.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 99A Benefits ID (Package Limited) 195A S l Improved Gate, Avalanche and Dynamic

2.1. irfs4115-7ppbf.pdf Size:302K _upd

IRFS4115PBF
IRFS4115PBF

PD -97147 IRFS4115-7PPbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 10.0m : l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 11.8m : ID 105A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance

 4.1. irfs41n15dpbf.pdf Size:337K _upd

IRFS4115PBF
IRFS4115PBF

PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications HEXFET® Power MOSFET l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID Benefits 150V 0.045 41A l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avala

4.2. irfs4127pbf.pdf Size:355K _upd

IRFS4115PBF
IRFS4115PBF

PD - 96177 IRFS4127PbF IRFSL4127PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 18.6m l High Speed Power Switching G max. 22m l Hard Switched and High Frequency Circuits ID 72A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D D l Fully Characterized Capa

 4.3. irfs41n15d.pdf Size:193K _international_rectifier

IRFS4115PBF
IRFS4115PBF

PD- 93804A IRFB41N15D IRFS41N15D SMPS MOSFET IRFSL41N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.045? 41A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-220

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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